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d a t a sh eet product speci?cation 2002 nov 15 TEA1208T high efficiency dc/dc converter integrated circuits
2002 nov 15 2 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T features fully integrated dc/dc converter circuit up-or-down conversion start-up from 1.85 v input voltage adjustable output voltage high efficiency over a wide range of loads power handling capability up to 0.42 a continuous average current 275 khz switching frequency low quiescent power consumption external clock synchronization true current limit for li-ion battery compatibility up to 100% duty cycle in down conversion undervoltage lockout shut-down function 8-pin so package. applications cellular and cordless phones, personal digital assistants (pdas) and others supply voltage source for low-voltage chip sets portable computers battery backup supplies cameras. general description the TEA1208T is a fully integrated dc/dc converter. efficient, compact and dynamic power conversion is achieved using special digital control concepts - pulse width modulation (pwm) and pulse frequency modulation (pfm), integrated low r dson cmos power switches with low parasitic capacitances, and fully synchronous rectification. the device operates at a switching frequency of 275 khz requiring only minimum sized external components. deadlock is prevented by an on-chip undervoltage lockout circuit. efficient behaviour during short load peaks and compatibility with li-ion batteries is guaranteed by an accurate current limiting function. ordering information type number package name description version TEA1208T so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1
2002 nov 15 3 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T quick reference data symbol parameter conditions min. typ. max. unit voltage levels u p conversion ; pin u/d = low v i input voltage v i(start) - 5.50 v v o output voltage 2.80 - 5.50 v v i(start) start-up input voltage i l < 62 ma 1.40 1.60 1.85 v d own conversion ; pin u/d = high v i input voltage 2.80 - 5.50 v v o output voltage 1.30 - 5.50 v g eneral v fb feedback voltage 1.19 1.24 1.29 v current levels i q quiescent current on pin 3 down conversion; v i = 3.6 v 52 65 72 m a i shdwn current in shut-down state - 210 m a i lx maximum continuous current on pin 4 t amb =80 c -- 0.30 a d i lim current limit deviation i lim = 0.5 to 2.5 a up conversion - 17.5 - +17.5 % down conversion - 17.5 - +17.5 % power mosfets r dson drain-to-source on-state resistance n-type 0.10 0.20 0.30 w p-type 0.10 0.22 0.35 w ef?ciency h 1 ef?ciency up conversion v i = 3.6 v; v o = 4.6 v; l1 = 10 m h i l =1ma - 88 - % i l = 200 ma - 95 - % h 2 ef?ciency down conversion v i = 3.6 v; v o = 2.0 v; l1 = 10 m h i l =1ma - 86 - % i l = 200 ma - 93 - % timing f sw switching frequency pwm mode 220 275 330 khz f sync synchronization clock input frequency 4 6.5 20 mhz t res response time from standby to p 0(max) - 50 -m s
2002 nov 15 4 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... block diagram n dbook, full pagewidth mce155 control logic and mode gearbox start-up circuit i/v converter internal supply i/v converter time counter band gap reference 13 mhz oscillator sync gate temperature protection digital controller sense fet p-type power fet sense fet shdwn gnd sync u/d n-type power fet lx upout/dnin fb TEA1208T 5 681 4 ilim 2 3 7 current limit comparators fig.1 block diagram.
2002 nov 15 5 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T pinning symbol pin description u/d 1 up-or-down conversion selection input; active low for up conversion ilim 2 current limiting resistor connection upout/dnin 3 output voltage in up conversion; input voltage in down conversion lx 4 inductor connection sync 5 synchronization clock input gnd 6 ground fb 7 feedback input shdwn 8 shut-down input handbook, halfpage mce154 1 2 3 4 8 7 6 5 u/d shdwn ilim fb upout/dnin gnd lx sync TEA1208T fig.2 pin configuration. functional description control mechanism the TEA1208T dc/dc converter is able to operate in either pfm (discontinuous conduction) or pwm (continuous conduction) mode. all switching actions are completely determined by a digital control circuit which uses the output voltage level as its control input. this special design enables the use of a pulse width and frequency modulation scheme, which ensures optimum power efficiency over the complete operating range of the converter. when high output power is requested, the device operates in pwm (continuous conduction) mode. this results in minimum ac currents in the circuit components and hence optimum efficiency, minimum costs and low emc. in pwm mode, the output voltage is allowed to vary between a window represented by two predefined voltage levels. as long as the output voltage stays within this window, switching continues in a fixed pattern. when the output voltage reaches a window border, the digital controller immediately adjusts the pulse width and inserts a current step so that the output voltage stays within the window with higher or lower current capability. this approach enables very fast reaction to load variations. figure 3 shows the converters response to a sudden load increase. the upper trace shows the output voltage. the ripple on top of the dc level is a result of the current in the output capacitor, which changes sign twice per cycle, times the capacitors internal equivalent series resistance (esr). after each ramp-down of the inductor current, i.e. when the esr effect increases the output voltage, the converter determines what to do in the next cycle. as soon as more load current is taken from the output the output voltage starts to decay. when the output voltage becomes lower than the low limit of the window, it is corrected by extending the period of the inductor current ramp-up time. as a result, the dc current level is increased and normal pwm control can continue. the output voltage (including esr effect) is again within the predefined window. figure 4 depicts the spread of the output voltage window. the absolute value is most dependent on spread, while the actual window size is not affected. for a given device, the output voltage will not vary more than 2% typically. in low output power situations, the TEA1208T will switch over to pfm (discontinuous conduction) operating mode. in this mode, regulation information obtained in previous pwm operating modes is used. this results in optimum inductor peak current levels in the pfm mode, which are slightly larger than the inductor ripple current in the pwm mode. as a result, the transition between pfm and pwm mode is optimum under all circumstances. in the pfm mode the TEA1208T regulates the output voltage to the high window limit as shown in fig.3. synchronous recti?cation for optimum efficiency over the whole load range, synchronous rectifiers inside the TEA1208T ensure that during the whole second switching phase, all inductor current will flow through the low-ohmic power mosfets. special circuitry is included which detects that the inductor current reaches zero. following this detection, the digital controller switches off the power mosfet and starts regulation.
2002 nov 15 6 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T start-up start-up from low input voltage in up conversion is realized by an independent start-up oscillator, which starts switching the n-type power mosfet as soon as the voltage at pin upout/dnin is measured to be sufficiently high. the switch actions of the start-up oscillator will increase the output voltage. as soon as the output voltage is high enough for normal regulation, the digital control system takes over the control of the power mosfets. undervoltage lockout as a result of too high a load or disconnection of the input power source, the output voltage can drop so low that normal regulation cannot be guaranteed. in this case, the device switches back to start-up mode. if the output voltage drops even further, switching stops completely. shut-down when the shut-down input is made high, the converter disables both power switches reducing the power consumption to a few microamperes. power switches the device has two power switches - one n-type and one p-type power mosfet, having a typical drain-to-source resistance of 0.20 w and 0.22 w respectively. the maximum average current in the power switches is 0.30 a at t amb =80 c. temperature protection in pwm mode, the device will stop operating if the die temperature is too high (typically 175 c). operation resumes when the die temperature falls below 175 c. as a result, low-frequency cycling between the on and off state will occur. note that if the temperature of the device approaches t max , the actual maximum parameter limits may be very different from those specified. current limiters if the current in one of the power switches exceeds its limit in the pwm mode, the current ramp is stopped immediately, and the next switching phase is entered. current limiting is required to enable optimal use of energy in li-ion batteries, and to keep power conversion efficient during temporary high loads. furthermore, current limiting protects the ic against overload conditions, inductor saturation, etc. the current limiting level is set by an external resistor. external synchronization if an external high-frequency clock is applied to the synchronization clock input, the switching frequency in pwm mode will be exactly that frequency divided by 22. in the pfm mode, the switching frequency is always lower. the quiescent current of the device increases when external clock pulses are applied. when no external synchronization is necessary, the synchronization clock input must be connected to ground level. behaviour at input voltage exceeding the speci?ed range in general, an input voltage exceeding the specified range is not recommended since instability may occur. there are two exceptions: up conversion: at an input voltage higher than the target output voltage, but up to 6 v, the converter will stop switching and the internal p-type power mosfet will be conducting. the output voltage will equal the input voltage minus some resistive voltage drop. the current limiting function is not active. down conversion: when the input voltage is lower than the target output voltage, but higher than 2.8 v, the p-type power mosfet will stay conducting resulting in an output voltage being equal to the input voltage minus some resistive voltage drop. the current limiting function remains active.
2002 nov 15 7 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T handbook, full pagewidth mgk925 start corrective action load increase high window limit low window limit v o i l time time fig.3 response to load increase. handbook, full pagewidth mgr667 maximum positive spread of v fb maximum negative spread of v fb typical situation lower specification limit upper specification limit + 4% - 4% 2% v out, typ v h v l 2% v h v l v h v l 2% fig.4 spread of location of output voltage window.
2002 nov 15 8 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. class 3; equivalent to discharging a 100 pf capacitor through a 1500 resistor. 2. class 2; equivalent to discharging a 200 pf capacitor through a 10 w resistor and a 0.75 m h inductor. thermal characteristics quality specification in accordance with snw-fq-611 part e . symbol parameter conditions min. max. unit v n voltage on any pin shut-down mode - 0.2 +6.5 v operating mode - 0.2 +5.9 v t j junction temperature - 25 +150 c t amb ambient temperature - 40 +80 c t stg storage temperature - 40 +125 c v es electrostatic handling voltage human body model; note 1 - 4000 +4000 v machine model; note 2 - 300 +300 v symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 150 k/w
2002 nov 15 9 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T characteristics t amb = - 40 to +80 c; all voltages are measured with respect to ground; positive currents ?ow into the ic; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit voltage levels u p conversion ; pin u/d = low v i input voltage v i(start) - 5.50 v v o output voltage 2.80 - 5.50 v v i(start) start-up input voltage i l < 62 ma 1.40 1.60 1.85 v v i(uvlo) undervoltage lockout input voltage note 1 1.50 2.10 2.50 v d own conversion ; pin u/d = high v i input voltage note 2 2.80 - 5.50 v v o output voltage 1.30 - 5.50 v g eneral v fb feedback input voltage 1.19 1.24 1.29 v d v wdw output voltage window pwm mode 1.5 2.0 3.0 % current levels i q quiescent current on pin 3 down conversion; v 3 = 3.6 v; note 3 52 65 72 m a i shdwn current in shut-down mode - 210 m a i lx maximum continuous current on pin 4 t amb =60 c -- 0.42 a t amb =80 c -- 0.30 a d i lim current limit deviation i lim = 0.5 to 2.5 a; note 4 up conversion - 17.5 - +17.5 % down conversion - 17.5 - +17.5 % power mosfets r dson drain-to-source on-state resistance n-type 0.10 0.20 0.30 w p-type 0.10 0.22 0.35 w ef?ciency h 1 ef?ciency up conversion v i = 3.6 v; v o = 4.6 v; l1 = 10 m h; note 5 i l =1ma - 88 - % i l =10ma - 93 - % i l =50ma - 93 - % i l = 100 ma - 94 - % i l = 200 ma - 95 - % i l = 500 ma - 92 - %
2002 nov 15 10 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T notes 1. the undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. when the temperature increases, the minimum supply voltage of the digital control part of the ic decreases and therefore the correct operation of this function is guaranteed over the whole temperature range. 2. when v i is lower than the target output voltage but higher than 2.8 v, the p-type power mosfet will remain conducting (100% duty cycle), resulting in v o following v i . 3. v 3 is the voltage on pin 3 (upout/dnin). 4. the current limit is defined by an external resistor r lim (see section current limiting resistors). accuracy of the current limit increases in proportion to the programmed current limiting level. 5. the specified efficiency is valid when using an output capacitor having an esr of 0.10 w and a 10 m h small size inductor (coilcraft dt1608c-103). 6. if the applied high-level voltage is less than v 3 - 1 v, the quiescent current (l q ) of the device will increase. h 2 ef?ciency down conversion v i = 3.6 v; v o = 2.0 v; l1 = 10 m h; note 5 i l =1ma - 86 - % i l =10ma - 91 - % i l =50ma - 92 - % i l = 100 ma - 92 - % i l = 200 ma - 93 - % i l = 500 ma - 89 - % timing f sw switching frequency pwm mode 220 275 330 khz f sync synchronization clock input frequency 4 6.5 20 mhz t res response time from standby to p o(max) - 50 -m s temperature t amb ambient temperature - 40 +25 +80 c t max internal cut-off temperature 150 175 200 c digital levels v ll low-level input voltage on pins 1, 5 and 8 0 - 0.4 v v ih high-level input voltage note 6 on pin 1 v 3 - 0.4 - v 3 + 0.3 v on pins 5 and 8 0.55v 3 - v 3 + 0.3 v symbol parameter conditions min. typ. max. unit
2002 nov 15 11 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T application information handbook, full pagewidth mce156 c1 l1 c2 r2 r1 r lim d1 7 fb 3 upout/dnin v o TEA1208T lx 6 4 1582 v i gnd u/d sync shdwn ilim fig.5 complete application diagram for up conversion. handbook, full pagewidth 2 1568 mce157 c1 c2 d1 7 4 l1 v o TEA1208T 3 upout/dnin v i r lim r2 r1 fb lx gnd u/d sync shdwn ilim fig.6 complete application diagram for down conversion.
2002 nov 15 12 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T external component selection i nductor l1 the performance of the TEA1208T is not very sensitive to the inductance value. best efficiency performance over a wide load current range is achieved by using e.g. coilcraft do1608c, having an inductance of 10 m h and a saturation current level of 1.1 a. in case the maximum output current is lower, other inductors are also suitable such as the small sized coilcraft dt1608 range or murata lqh4n series. i nput capacitor c1 the value of capacitor c1 strongly depends on the type of input source. in general, a 100 m f tantalum capacitor will do, or a 10 m f ceramic capacitor featuring very low series resistance (esr value). o utput capacitor c2 the value and type of capacitor c2 depend on the maximum output current and the ripple voltage which is allowed in the application. low-esr tantalum as well as ceramic capacitors show good results. the most important specification of capacitor c2 is its esr, which mainly determines the output voltage ripple. d iode d1 the schottky diode is only used a short time during takeover from n-type power mosfet and p-type power mosfet and vice versa. therefore, a medium-power diode such as philips prll5819 is sufficient. f eedback resistors r1 and r2 the output voltage is determined by the resistors r1 and r2. the following conditions apply: use 1% accurate smd type resistors only. in case larger body resistors are used, the capacitance on pin 7 (feedback input) will be too large, causing inaccurate operation. resistors r1 and r2 should have a maximum value of 50 k w when connected in parallel. a higher value will result in inaccurate operation. under these conditions, the output voltage can be calculated by the formula: c urrent limiting resistors the maximum instantaneous current is set by the external resistor r lim . the preferred type is smd, 1% accurate. the connection of resistor r lim differs per mode: at up conversion: resistor r lim must be connected between pin 2 (ilim) and pin 3 (upout/dnin). the current limiting level is defined by: at down conversion: resistor r lim must be connected between pin 2 (ilim) and pin 6 (gnd). the current limiting level is defined by: the average inductor current during limited current operation also depends on the inductance value, input voltage, output voltage and resistive losses in all components in the power path. ensure that i lim 2002 nov 15 13 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T package outline unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. 1.0 0.4 sot96-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.050 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale so8: plastic small outline package; 8 leads; body width 3.9 mm sot96-1 97-05-22 99-12-27
2002 nov 15 14 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 220 c for thick/large packages, and below 235 c for small/thin packages. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2002 nov 15 15 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. 2. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 3. these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 5. wave soldering is suitable for lqfp, tqfp and qfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. wave soldering is suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package (1) soldering method wave reflow (2) bga, lbga, lfbga, sqfp, tfbga, vfbga not suitable suitable hbcc, hbga, hlqfp, hsqfp, hsop, htqfp, htssop, hvqfn, hvson, sms not suitable (3) suitable plcc (4) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (4)(5) suitable ssop, tssop, vso not recommended (6) suitable
2002 nov 15 16 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 nov 15 17 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T notes
2002 nov 15 18 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T notes
2002 nov 15 19 philips semiconductors product speci?cation high ef?ciency dc/dc converter TEA1208T notes
? koninklijke philips electronics n.v. 2002 sca74 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 403502/01/pp 20 date of release: 2002 nov 15 document order number: 9397 750 10575

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